Determination of donor and acceptor densities in high-purity GaAs from photoluminescence analysis
Lu, Z. H. ; Hanna, M. C. ; Szmyd, D. M. ; Oh, E. G. ; Majerfeld, A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We report a new analysis technique to determine the acceptor density NA and the donor density ND in high-purity GaAs from 10 K photoluminescence (PL) measurements. For both n-type and p-type samples, we find that NA/ND is related to the excitonic intensity ratio rx=I(A0,X)/I(D0,X) by NA/ND=0.89rx−0.06. In addition, NA can be determined from NA=1014IA, where IA is the emission intensity of the donor-acceptor pair transition normalized to the intensity of the unresolved exciton peak. Therefore, for n-type and p-type material with an impurity density 1013–1016 cm−3, NA and ND can be determined solely from a 10 K PL measurement. The advantage of this technique lies in its nondestructive nature and its applicability to situations where Hall measurements are not possible or suitable.
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| Type of Medium: |
Electronic Resource
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| URL: |