Optically induced electromagnetic radiation from semiconductor surfaces
Zhang, X.-C. ; Darrow, J. T. ; Hu, B. B. ; Auston, D. H. ; Schmidt, M. T. ; Tham, P. ; Yang, E. S.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Ultrafast electromagnetic radiation induced by a femtosecond laser beam from a semiconductor provides determination of the impurity doping concentration, carrier mobility, sign, and strength of the depletion field near the semiconductor surface.
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| Type of Medium: |
Electronic Resource
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| URL: |