1.5 μm InGaAsP/InP buried crescent superluminescent diode on a p-InP substrate
Chen, T. R. ; Zhuang, Y. H. ; Xu, Y. J. ; Yariv, A. ; Kwong, N. S.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
An InGaAsP/InP superluminescent diode (SLD) emitting at 1.54 μm has been fabricated. The device uses a buried crescent structure on a p-InP substrate. The parameters were optimized for high output power, small spectral modulation, and smooth far-field operation. The coherence function of the SLD emission was studied systematically. An output power of 5 mW, a coherence length of 41 μm, and a second coherence peak suppression ratio of 22 dB were obtained.
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| Type of Medium: |
Electronic Resource
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| URL: |