Effects of surface hydrogen on the air oxidation at room temperature of HF-treated Si (100) surfaces
Hirashita, N. ; Kinoshita, M. ; Aikawa, I. ; Ajioka, T.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Thermally stimulated desorption and x-ray photoelectron spectroscopy were used to study the air oxidation at room temperature of HF-treated Si(100) surfaces. The desorption results indicated an appreciable density of hydrogen at the surface. Air oxidation experiments with predesorbing surface hydrogen were carried out and an obtained linear relationship between the amount of H2 desorption and oxidation indicated that the oxidation was allowed by H2 desorption. The surface hydrogen was also found to be stable in air at room temperature and to contribute to a retardation in air oxidation of the surface.
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| Type of Medium: |
Electronic Resource
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| URL: |