Low-loss GaAs/AlGaAs optical waveguides and phase modulator on silicon substrate grown by molecular beam epitaxy

Kim, Y. S. ; Lee, S. S. ; Ramaswamy, R. V. ; Sakai, S. ; Kao, Y. C. ; Shichijo, H.

Woodbury, NY : American Institute of Physics (AIP)
Published 1990
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on the fabrication and the characterization of low-loss, single-mode GaAs/AlGaAs single heterostructure ridge waveguides and a linear electro-optic phase modulator on silicon substrate. The waveguides and the phase modulator were grown by molecular beam epitaxy and were characterized at a 1.3 μm wavelength. The average TE mode propagation loss of 1.24 dB/cm, obtained for a 6-μm-wide ridge waveguide, is the lowest loss so far reported. The measured phase shift efficiency of the phase modulator was 3.5°/V mm.
Type of Medium:
Electronic Resource
URL: