Low-loss GaAs/AlGaAs optical waveguides and phase modulator on silicon substrate grown by molecular beam epitaxy
Kim, Y. S. ; Lee, S. S. ; Ramaswamy, R. V. ; Sakai, S. ; Kao, Y. C. ; Shichijo, H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
ISSN: |
1077-3118
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Source: |
AIP Digital Archive
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Topics: |
Physics
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Notes: |
We report on the fabrication and the characterization of low-loss, single-mode GaAs/AlGaAs single heterostructure ridge waveguides and a linear electro-optic phase modulator on silicon substrate. The waveguides and the phase modulator were grown by molecular beam epitaxy and were characterized at a 1.3 μm wavelength. The average TE mode propagation loss of 1.24 dB/cm, obtained for a 6-μm-wide ridge waveguide, is the lowest loss so far reported. The measured phase shift efficiency of the phase modulator was 3.5°/V mm.
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Type of Medium: |
Electronic Resource
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URL: |