Isoelectronic bound exciton emission from Si-rich silicon-germanium alloys
Modavis, R. A. ; Hall, D. G. ; Bevk, J. ; Freer, B. S. ; Feldman, L. C. ; Weir, B. E.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We report the observation and characterization of luminescence in the wavelength range 1.1 μm〈λ〈 1.4 μm from silicon-rich silicon-germanium alloys, grown by molecular beam epitaxy, implanted with beryllium atoms. The luminescence originates with the radiative decay of an exciton bound to an isoelectronic impurity complex. The wavelength of this emission can be controlled by varying the Ge concentration.
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| Type of Medium: |
Electronic Resource
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| URL: |