Solid phase reaction and electrical properties in Zr/Si system
Yamauchi, T. ; Zaima, S. ; Mizuno, K. ; Kitamura, H. ; Koide, Y. ; Yasuda, Y.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The specific contact resistivity and the Schottky barrier height in the Zr/Si system have been measured as a function of annealing temperature. The specific contact resistivity decreases with increasing annealing temperature and a minimum value of 4×10−8 Ω cm2 is obtained after annealing at 420 °C in a vacuum, which is about two orders of magnitude lower than that of the Al (1.5% Si)/n+-Si system. The formation of ZrSi2 is observed at annealing temperatures above 350 °C, which can be considered to be related to the lowering of contact resistance. The Schottky barrier heights of as-grown Zr films are 0.61 eV for p-type Si and 0.52 eV for n-type Si.
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| Type of Medium: |
Electronic Resource
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| URL: |