Unintentional indium incorporation in GaAs grown by molecular beam epitaxy
Myers, D. R. ; Dawson, L. R. ; Klem, J. F. ; Brennan, T. M. ; Hammons, B. E. ; Simons, D. S. ; Comas, J. ; Pellegrino, J.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We have quantified unintentional indium incorporation in GaAs grown by molecular beam epitaxy in a variety of commercial systems. We find that the unintentional indium density in the epitaxial GaAs is more a function of mounting technique and prior machine history than of the manufacturer's design. The indium densities detected in the epitaxial GaAs for substrates that only partially obscure an indium-bearing mount are equal to levels reported to result in minimum defect densities and narrowest photoluminescence linewidths in In-doped GaAs.
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| Type of Medium: |
Electronic Resource
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| URL: |