Resonant tunneling of electrons from quantized levels in the accumulation layer of double-barrier heterostructures
Wu, J. S. ; Chang, C. Y. ; Lee, C. P. ; Chang, K. H. ; Liu, D. G. ; Liou, D. C.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
| ISSN: |
1077-3118
|
|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
We report the first observation of the resonant tunneling features associated with the quantized levels in the accumulation layer of the double-barrier resonant tunneling structure (DBRTS) with undoped electrodes. This quantum effect causes additional kinks in the current-voltage (I-V) characteristic and an increasingly enhanced oscillation behavior in the differential conductance-voltage (G-V) curve. Three discrete quantum levels have been observed based on the room-temperature G-V curve. Our measurements are made without the presence of magnetic field and thus the experimental results are totally different from the magneto-oscillation.
|
| Type of Medium: |
Electronic Resource
|
| URL: |