Observation of an ordered structure in the initial stage of Ge/Si heteroepitaxial growth
Ohshima, N. ; Koide, Y. ; Itoh, K. ; Zaima, S. ; Yasuda, Y.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
An ordered structure with the double periodicity in a 〈111〉 direction has been found by in situ reflection high-energy electron diffraction observation in the initial stage of Ge films grown on (100)Si and (811)Si substrate surfaces by GeH4 gas source molecular beam epitaxy. The ordered structure is formed on {111} planes parallel to the side planes of 〈011〉 steps on {811} facets of Ge growing islands on both substrates. The formation is observed at substrate temperatures of 300–700 °C and is considered to result from solid phase reactions at the interfaces during growth.
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| Type of Medium: |
Electronic Resource
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| URL: |