Cathodoluminescence study of erbium in La1−xErxF3 epitaxial layers on Si(111)
Müller, H. D. ; Schneider, J. ; Lüth, H. ; Strümpler, R.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Erbium-substituted La1−xErxF3 lanthanum trifluoride epitaxial layers have been grown on Si(111) substrates by molecular beam epitaxy (MBE). Strong near-infrared luminescence, peaked at 1.54 μm, was observed from such films under electron beam excitation. This cathodoluminescence arises from the intra-4f-shell transitions 4I13/2→4I15/2 of Er3+(4f11). The infrared spectra reveal that MBE-grown LaF3 layers on Si(111) crystallize in the hexagonal tysonite structure, typical for bulk LaF3 single crystals.
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| Type of Medium: |
Electronic Resource
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| URL: |