Cavity length dependence of the wavelength of strained-layer InGaAs/GaAs lasers
Chen, T. R. ; Zhuang, Y. H. ; Eng, L. E. ; Yariv, A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The lasing wavelength of a strained-layer InGaAs/GaAs single quantum well laser has been found to depend strongly on the cavity length. The relationship between the lasing wavelength and the cavity length was established experimentally and a cavity length tuning mechanism for a quantum well laser is thus made possible.
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| Type of Medium: |
Electronic Resource
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| URL: |