Excitation intensity dependence of photoluminescence in Ga0.52In0.48P
DeLong, M. C. ; Taylor, P. C. ; Olson, J. M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
Woodbury, NY : American Institute of Physics (AIP)
Published 1990
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The excitation intensity dependence of the photoluminescence (PL) from Ga0.52In0.48P grown by organometallic vapor phase epitaxy on GaAs substrates has been investigated as a function of epitaxial layer growth temperature and substrate orientation. It is well known that the degree of ordering and the band-gap energy of this material are functions of growth conditions. We report here on a PL emission which shifts rapidly with excitation intensity. The rate of emission shift is also a function of growth conditions including substrate orientation. There is, however, no significant correlation between the band-gap energy and the rate of emission shift in Ga0.52In0.48P. This PL shift is explained in terms of band filling of potential fluctuations that are associated with a microstructure consisting of ordered domains within a disordered matrix.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289630099931136 |
|---|---|
| autor | DeLong, M. C. Taylor, P. C. Olson, J. M. |
| autorsonst | DeLong, M. C. Taylor, P. C. Olson, J. M. |
| book_url | http://dx.doi.org/10.1063/1.103615 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218279035 |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | The excitation intensity dependence of the photoluminescence (PL) from Ga0.52In0.48P grown by organometallic vapor phase epitaxy on GaAs substrates has been investigated as a function of epitaxial layer growth temperature and substrate orientation. It is well known that the degree of ordering and the band-gap energy of this material are functions of growth conditions. We report here on a PL emission which shifts rapidly with excitation intensity. The rate of emission shift is also a function of growth conditions including substrate orientation. There is, however, no significant correlation between the band-gap energy and the rate of emission shift in Ga0.52In0.48P. This PL shift is explained in terms of band filling of potential fluctuations that are associated with a microstructure consisting of ordered domains within a disordered matrix. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1990 |
| publikationsjahr_facette | 1990 |
| publikationsjahr_intervall | 8009:1990-1994 |
| publikationsjahr_sort | 1990 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 57 (1990), S. 620-622 |
| search_space | articles |
| shingle_author_1 | DeLong, M. C. Taylor, P. C. Olson, J. M. |
| shingle_author_2 | DeLong, M. C. Taylor, P. C. Olson, J. M. |
| shingle_author_3 | DeLong, M. C. Taylor, P. C. Olson, J. M. |
| shingle_author_4 | DeLong, M. C. Taylor, P. C. Olson, J. M. |
| shingle_catch_all_1 | DeLong, M. C. Taylor, P. C. Olson, J. M. Excitation intensity dependence of photoluminescence in Ga0.52In0.48P The excitation intensity dependence of the photoluminescence (PL) from Ga0.52In0.48P grown by organometallic vapor phase epitaxy on GaAs substrates has been investigated as a function of epitaxial layer growth temperature and substrate orientation. It is well known that the degree of ordering and the band-gap energy of this material are functions of growth conditions. We report here on a PL emission which shifts rapidly with excitation intensity. The rate of emission shift is also a function of growth conditions including substrate orientation. There is, however, no significant correlation between the band-gap energy and the rate of emission shift in Ga0.52In0.48P. This PL shift is explained in terms of band filling of potential fluctuations that are associated with a microstructure consisting of ordered domains within a disordered matrix. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | DeLong, M. C. Taylor, P. C. Olson, J. M. Excitation intensity dependence of photoluminescence in Ga0.52In0.48P The excitation intensity dependence of the photoluminescence (PL) from Ga0.52In0.48P grown by organometallic vapor phase epitaxy on GaAs substrates has been investigated as a function of epitaxial layer growth temperature and substrate orientation. It is well known that the degree of ordering and the band-gap energy of this material are functions of growth conditions. We report here on a PL emission which shifts rapidly with excitation intensity. The rate of emission shift is also a function of growth conditions including substrate orientation. There is, however, no significant correlation between the band-gap energy and the rate of emission shift in Ga0.52In0.48P. This PL shift is explained in terms of band filling of potential fluctuations that are associated with a microstructure consisting of ordered domains within a disordered matrix. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | DeLong, M. C. Taylor, P. C. Olson, J. M. Excitation intensity dependence of photoluminescence in Ga0.52In0.48P The excitation intensity dependence of the photoluminescence (PL) from Ga0.52In0.48P grown by organometallic vapor phase epitaxy on GaAs substrates has been investigated as a function of epitaxial layer growth temperature and substrate orientation. It is well known that the degree of ordering and the band-gap energy of this material are functions of growth conditions. We report here on a PL emission which shifts rapidly with excitation intensity. The rate of emission shift is also a function of growth conditions including substrate orientation. There is, however, no significant correlation between the band-gap energy and the rate of emission shift in Ga0.52In0.48P. This PL shift is explained in terms of band filling of potential fluctuations that are associated with a microstructure consisting of ordered domains within a disordered matrix. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | DeLong, M. C. Taylor, P. C. Olson, J. M. Excitation intensity dependence of photoluminescence in Ga0.52In0.48P The excitation intensity dependence of the photoluminescence (PL) from Ga0.52In0.48P grown by organometallic vapor phase epitaxy on GaAs substrates has been investigated as a function of epitaxial layer growth temperature and substrate orientation. It is well known that the degree of ordering and the band-gap energy of this material are functions of growth conditions. We report here on a PL emission which shifts rapidly with excitation intensity. The rate of emission shift is also a function of growth conditions including substrate orientation. There is, however, no significant correlation between the band-gap energy and the rate of emission shift in Ga0.52In0.48P. This PL shift is explained in terms of band filling of potential fluctuations that are associated with a microstructure consisting of ordered domains within a disordered matrix. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | Excitation intensity dependence of photoluminescence in Ga0.52In0.48P |
| shingle_title_2 | Excitation intensity dependence of photoluminescence in Ga0.52In0.48P |
| shingle_title_3 | Excitation intensity dependence of photoluminescence in Ga0.52In0.48P |
| shingle_title_4 | Excitation intensity dependence of photoluminescence in Ga0.52In0.48P |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:52.093Z |
| titel | Excitation intensity dependence of photoluminescence in Ga0.52In0.48P |
| titel_suche | Excitation intensity dependence of photoluminescence in Ga0.52In0.48P |
| topic | U |
| uid | nat_lic_papers_NLZ218279035 |