Field-induced refractive index variation spectrum in a GaInAs/InP quantum wire structure
Ravikumar, K. G. ; Kikugawa, T. ; Aizawa, T. ; Arai, S. ; Suematsu, Y.
Woodbury, NY : American Institute of Physics (AIP)
Published 1991
Woodbury, NY : American Institute of Physics (AIP)
Published 1991
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We report the electric field induced refractive index variation spectrum in a GaInAs/InP multilayered (three layers) quantum wire structure (λg∼1.48 μm) in the range 1.484–1.65 μm with the maximum positive index variation of 4% at around 1.52 μm at an applied reverse bias voltage of 3 V. We have also observed the anisotropic property of the index variation with respect to the quantum wire direction to the input light. These multilayered quantum wire structures were fabricated by low-pressure electron cyclotron resonance reactive ion beam etching and low-pressure organometallic vapor phase epitaxy methods.
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| Type of Medium: |
Electronic Resource
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| URL: |