Improved electronic properties of GaAs surfaces stabilized with phosphorus
Viktorovitch, P. ; Gendry, M. ; Krawczyk, S. K. ; Krafft, F. ; Abraham, P. ; Bekkaoui, A. ; Monteil, Y.
Woodbury, NY : American Institute of Physics (AIP)
Published 1991
Woodbury, NY : American Institute of Physics (AIP)
Published 1991
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We report on a new passivation procedure of the GaAs surface based on a thermal treatment under a PH3 overpressure. This treatment results, by As/P exchange, in the formation of a thin superficial GaP layer which prevents the formation of an arsenic oxide, as observed by x-ray photoelectron spectroscopy analysis. Subsequent increase of the photoluminescence signal indicates improved electronic properties of GaAs surfaces as a result of this passivation procedure.
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| Type of Medium: |
Electronic Resource
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| URL: |