Optically controlled surface-emitting lasers
Chan, W. K. ; Harbison, J. P. ; von Lehmen, A. C. ; Florez, L. T. ; Nguyen, C. K. ; Schwarz, S. A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1991
Woodbury, NY : American Institute of Physics (AIP)
Published 1991
| ISSN: |
1077-3118
|
|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
Vertical cavity surface-emitting lasers are integrated with GaAs/AlGaAs heterojunction phototransistors to yield optically controlled lasers. The two-terminal device operates in several modes: As an amplifier with a large signal, external optical gain of 5, as in optical logic gate, and as an optically or electrically triggerable latch. The optical AND gate has an output on-to-off ratio of 10:1. Although the device has no optical feedback, latching is achieved with appropriate biasing through impact ionization. The device structure is advantageous for forming large two-dimensional arrays for optical signal processing.
|
| Type of Medium: |
Electronic Resource
|
| URL: |
| _version_ | 1798289629490708480 |
|---|---|
| autor | Chan, W. K. Harbison, J. P. von Lehmen, A. C. Florez, L. T. Nguyen, C. K. Schwarz, S. A. |
| autorsonst | Chan, W. K. Harbison, J. P. von Lehmen, A. C. Florez, L. T. Nguyen, C. K. Schwarz, S. A. |
| book_url | http://dx.doi.org/10.1063/1.104919 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218272510 |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | Vertical cavity surface-emitting lasers are integrated with GaAs/AlGaAs heterojunction phototransistors to yield optically controlled lasers. The two-terminal device operates in several modes: As an amplifier with a large signal, external optical gain of 5, as in optical logic gate, and as an optically or electrically triggerable latch. The optical AND gate has an output on-to-off ratio of 10:1. Although the device has no optical feedback, latching is achieved with appropriate biasing through impact ionization. The device structure is advantageous for forming large two-dimensional arrays for optical signal processing. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1991 |
| publikationsjahr_facette | 1991 |
| publikationsjahr_intervall | 8009:1990-1994 |
| publikationsjahr_sort | 1991 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 58 (1991), S. 2342-2344 |
| search_space | articles |
| shingle_author_1 | Chan, W. K. Harbison, J. P. von Lehmen, A. C. Florez, L. T. Nguyen, C. K. Schwarz, S. A. |
| shingle_author_2 | Chan, W. K. Harbison, J. P. von Lehmen, A. C. Florez, L. T. Nguyen, C. K. Schwarz, S. A. |
| shingle_author_3 | Chan, W. K. Harbison, J. P. von Lehmen, A. C. Florez, L. T. Nguyen, C. K. Schwarz, S. A. |
| shingle_author_4 | Chan, W. K. Harbison, J. P. von Lehmen, A. C. Florez, L. T. Nguyen, C. K. Schwarz, S. A. |
| shingle_catch_all_1 | Chan, W. K. Harbison, J. P. von Lehmen, A. C. Florez, L. T. Nguyen, C. K. Schwarz, S. A. Optically controlled surface-emitting lasers Vertical cavity surface-emitting lasers are integrated with GaAs/AlGaAs heterojunction phototransistors to yield optically controlled lasers. The two-terminal device operates in several modes: As an amplifier with a large signal, external optical gain of 5, as in optical logic gate, and as an optically or electrically triggerable latch. The optical AND gate has an output on-to-off ratio of 10:1. Although the device has no optical feedback, latching is achieved with appropriate biasing through impact ionization. The device structure is advantageous for forming large two-dimensional arrays for optical signal processing. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Chan, W. K. Harbison, J. P. von Lehmen, A. C. Florez, L. T. Nguyen, C. K. Schwarz, S. A. Optically controlled surface-emitting lasers Vertical cavity surface-emitting lasers are integrated with GaAs/AlGaAs heterojunction phototransistors to yield optically controlled lasers. The two-terminal device operates in several modes: As an amplifier with a large signal, external optical gain of 5, as in optical logic gate, and as an optically or electrically triggerable latch. The optical AND gate has an output on-to-off ratio of 10:1. Although the device has no optical feedback, latching is achieved with appropriate biasing through impact ionization. The device structure is advantageous for forming large two-dimensional arrays for optical signal processing. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Chan, W. K. Harbison, J. P. von Lehmen, A. C. Florez, L. T. Nguyen, C. K. Schwarz, S. A. Optically controlled surface-emitting lasers Vertical cavity surface-emitting lasers are integrated with GaAs/AlGaAs heterojunction phototransistors to yield optically controlled lasers. The two-terminal device operates in several modes: As an amplifier with a large signal, external optical gain of 5, as in optical logic gate, and as an optically or electrically triggerable latch. The optical AND gate has an output on-to-off ratio of 10:1. Although the device has no optical feedback, latching is achieved with appropriate biasing through impact ionization. The device structure is advantageous for forming large two-dimensional arrays for optical signal processing. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Chan, W. K. Harbison, J. P. von Lehmen, A. C. Florez, L. T. Nguyen, C. K. Schwarz, S. A. Optically controlled surface-emitting lasers Vertical cavity surface-emitting lasers are integrated with GaAs/AlGaAs heterojunction phototransistors to yield optically controlled lasers. The two-terminal device operates in several modes: As an amplifier with a large signal, external optical gain of 5, as in optical logic gate, and as an optically or electrically triggerable latch. The optical AND gate has an output on-to-off ratio of 10:1. Although the device has no optical feedback, latching is achieved with appropriate biasing through impact ionization. The device structure is advantageous for forming large two-dimensional arrays for optical signal processing. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | Optically controlled surface-emitting lasers |
| shingle_title_2 | Optically controlled surface-emitting lasers |
| shingle_title_3 | Optically controlled surface-emitting lasers |
| shingle_title_4 | Optically controlled surface-emitting lasers |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:52.093Z |
| titel | Optically controlled surface-emitting lasers |
| titel_suche | Optically controlled surface-emitting lasers |
| topic | U |
| uid | nat_lic_papers_NLZ218272510 |