Interface roughness limited electron mobility in HgTe-CdTe superlattices
Meyer, J. R. ; Arnold, D. J. ; Hoffman, C. A. ; Bartoli, F. J.
Woodbury, NY : American Institute of Physics (AIP)
Published 1991
Woodbury, NY : American Institute of Physics (AIP)
Published 1991
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We demonstrate that interface roughness is the dominant low-temperature scattering mechanism for electrons in HgTe-CdTe superlattices with thin wells. Not only do the experimental mobilities follow the expected d6W dependence, but the observed temperature dependence is accurately reproduced by theory when the treatment of interface roughness scattering is generalized for narrow-gap superlattices. The fits to data yield roughness correlation lengths in the range 60–200 A(ring).
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| Type of Medium: |
Electronic Resource
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| URL: |