Photoreflectance study of surface photovoltage effects at (100)GaAs surfaces/interfaces
Yin, X. ; Chen, H-M. ; Pollak, F. H. ; Chan, Y. ; Montano, P. A. ; Kirchner, P. D. ; Pettit, G. D. ; Woodall, J. M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1991
Woodbury, NY : American Institute of Physics (AIP)
Published 1991
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We report a photoreflectance study of surface photovoltage (VS) effects on the determination of Fermi level pinning (VF) on (100) n-GaAs in air and with W-metal coverage (in situ) as a function of temperature (77 K〈T〈450 K) and light intensity (I). The dependence of VS on T and I can be explained by a modification the theory of M. Hecht [Phys. Rev. B 41, 7918 (1990)] yielding a value of VF=0.73±0.02 V. The effect of metal coverage is to reduce the influence of VS.
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| Type of Medium: |
Electronic Resource
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| URL: |