Room-temperature cw operation at 2.2 μm of GaInAsSb/AlGaAsSb diode lasers grown by molecular beam epitaxy
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Gain-guided Ga0.84In0.16As0.14Sb0.86/Al0.75 Ga0.25As0.06Sb0.94 double-heterostructure lasers emitting at ∼2.2 μm have been operated cw at heat sink temperatures up to 30 °C. The maximum output powers obtained at 5 and 20 °C were 10.5 and 4.6 mW/facet, respectively. For pulsed operation of broad-stripe lasers 300 μm wide and 1000 μm long, the threshold current density was as low as 940 A/cm2, the lowest room-temperature value reported for diode lasers emitting beyond 2 μm.
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| Type of Medium: |
Electronic Resource
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| URL: |