Monolithic two-dimensional surface-emitting strained-layer InGaAs/AlGaAs and AlInGaAs/AlGaAs diode laser arrays with over 50% differential quantum efficiencies
Goodhue, W. D. ; Donnelly, J. P. ; Wang, C. A. ; Lincoln, G. A. ; Rauschenbach, K. ; Bailey, R. J. ; Johnson, G. D.
Woodbury, NY : American Institute of Physics (AIP)
Published 1991
Woodbury, NY : American Institute of Physics (AIP)
Published 1991
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Monolithic two-dimensional surface-emitting arrays of strained-layer InGaAs/AlGaAs and AlInGaAs/AlGaAs diode lasers have been fabricated and operated pulsed with low-threshold current densities and differential quantum efficiencies greater than 50%. The InGaAs/AlGaAs arrays emit at 1.03 μm, while the AlInGaAs/AlGaAs arrays emit at 0.815 μm. Thus, it should be possible to fabricate monolithic arrays with comparable performance over a wide wavelength range. The individual lasers of the arrays are horizontal folded-cavity devices with two 45° internal reflectors and two top-surface facets. The design is simple to implement using optical pattern-generator masks, optical projection printing, and chlorine ion-beam-assisted etching in key fabrication steps.
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| Type of Medium: |
Electronic Resource
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| URL: |