Far-infrared photoresponse of the InAs/GaInSb superlattice
Campbell, I. H. ; Sela, I. ; Laurich, B. K. ; Smith, D. L. ; Bolognesi, C. R. ; Samoska, L. A. ; Gossard, A. C. ; Kroemer, H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1991
Woodbury, NY : American Institute of Physics (AIP)
Published 1991
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We describe the growth and characterization of the InAs/GaInSb superlattice on GaSb substrates. We present far-infrared (λ∼10 μm) photoabsorption and photoconductivity spectra which are in good agreement with theoretical predictions for the photoresponse of this spatially indirect superlattice. We report time-resolved photoconductivity measurements in which two response times are observed. We interpret the fast, 2 ns decay as resulting from electron-hole recombination via deep defect levels and the slow, 2 μs decay as resulting from recombination of a small fraction of the photogenerated minority carriers which become trapped at a defect site.
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| Type of Medium: |
Electronic Resource
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| URL: |