Far-infrared capture of electrons by DX centers
Plombon, J. J. ; Bewley, W. W. ; Felix, C. L. ; Sherwin, M. S. ; Hopkins, P. ; Sundaram, M. ; Gossard, A. C.
Woodbury, NY : American Institute of Physics (AIP)
Published 1992
Woodbury, NY : American Institute of Physics (AIP)
Published 1992
ISSN: |
1077-3118
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Source: |
AIP Digital Archive
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Topics: |
Physics
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Notes: |
Intense radiation with photon energy of a few meV can induce the capture of electrons by DX centers in AlxGa1−xAs:Si.
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Type of Medium: |
Electronic Resource
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URL: |