Far-infrared capture of electrons by DX centers

Plombon, J. J. ; Bewley, W. W. ; Felix, C. L. ; Sherwin, M. S. ; Hopkins, P. ; Sundaram, M. ; Gossard, A. C.

Woodbury, NY : American Institute of Physics (AIP)
Published 1992
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Intense radiation with photon energy of a few meV can induce the capture of electrons by DX centers in AlxGa1−xAs:Si.
Type of Medium:
Electronic Resource
URL: