Electrochemical sulfur passivation of GaAs
Hou, X. Y. ; Cai, W. Z. ; He, Z. Q. ; Hao, P. H. ; Li, Z. S. ; Ding, X. M. ; Wang, X.
Woodbury, NY : American Institute of Physics (AIP)
Published 1992
Woodbury, NY : American Institute of Physics (AIP)
Published 1992
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
An anodic sulfurized treatment of GaAs has been developed to passivate its surfaces preventing oxidation. The photoemission core level spectra show that the surface Ga and As atoms are bonded to S atoms to form a thick sulfurized layer. No oxygen uptakes on the sulfurized GaAs surface as illustrated by the high resolution electron energy loss spectroscopy. The results of photoluminescence spectra verify that the passivated surface has low surface recombination velocity and can protect the photoassisted oxidation under laser illumination.
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| Type of Medium: |
Electronic Resource
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| URL: |