Electronic structure of light-emitting porous Si
Vasquez, R. P. ; Fathauer, R. W. ; George, T. ; Ksendzov, A. ; Lin, T. L.
Woodbury, NY : American Institute of Physics (AIP)
Published 1992
Woodbury, NY : American Institute of Physics (AIP)
Published 1992
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Characterization of light-emitting porous Si films with x-ray photoelectron spectroscopy is reported. Only traces of O are detected on HF-etched samples, in contradiction to an earlier report that oxides are a significant component of porous Si. Si 2p and valence-band measurements demonstrate that the near-surface region of high porosity films which exhibit visible luminescence consists of amorphous Si.
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| Type of Medium: |
Electronic Resource
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| URL: |