Photoluminescence of porous Si, oxidized then deoxidized chemically
Nakajima, A. ; Itakura, T. ; Watanabe, S. ; Nakayama, N.
Woodbury, NY : American Institute of Physics (AIP)
Published 1992
Woodbury, NY : American Institute of Physics (AIP)
Published 1992
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We examined the change in photoluminescence spectra of porous Si when it is oxidized then deoxidized chemically. After both steps, photoluminescence shifted to higher frequencies and increased in intensity. These shifts to higher frequencies indicate the photoluminescence is a result of the quantum size effect. Moreover, the increase in photoluminescence intensity after oxidation suggests that termination by hydrogen on the porous Si surface does not always play a key role in the photoluminescence mechanism.
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| Type of Medium: |
Electronic Resource
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| URL: |