Microscopic study of the surfactant-assisted Si, Ge epitaxial growth
Cao, R. ; Yang, X. ; Terry, J. ; Pianetta, P.
Woodbury, NY : American Institute of Physics (AIP)
Published 1992
Woodbury, NY : American Institute of Physics (AIP)
Published 1992
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The Sb-assisted Si, Ge epitaxial growth processes have been studied using high resolution photoemission. It is found that the initially ordered Sb monolayer on the Si(100) and Ge(100) surfaces occupies the epitaxial sites and fully saturates the surface dangling bonds. This results in a reduction of the surface energy. During the growth process, the Sb atoms and the deposited Si, Ge atoms change their positions. Sb atoms segregate to the growth front to form a new ordered layer while leaving the uniform epitaxial Si, Ge layer behind.
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| Type of Medium: |
Electronic Resource
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| URL: |