Visible photoluminescence from porous Si formed by annealing and chemically etching amorphous Si
Jung, K. H. ; Shih, S. ; Kwong, D. L. ; Cho, C. C. ; Gnade, B. E.
Woodbury, NY : American Institute of Physics (AIP)
Published 1992
Woodbury, NY : American Institute of Physics (AIP)
Published 1992
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We have studied the visible photoluminescence (PL) and microstructure of amorphous Si (a-Si) after annealing and etching. The a-Si layers were grown on (100)Si substrates and partially crystallized by annealing between 550–1150 °C. Porous Si layers (PSLs) were then produced by etching in HF-HNO3. While no visible PL was observed from unannealed and etched a-Si, visible PL was detected after annealing and etching. The observation of visible PL after etching coincided with the observation of Si microcrystallites in the annealed layer. The results suggest that an initial crystalline structure is important for fabricating luminescent PSLs.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289625212518400 |
|---|---|
| autor | Jung, K. H. Shih, S. Kwong, D. L. Cho, C. C. Gnade, B. E. |
| autorsonst | Jung, K. H. Shih, S. Kwong, D. L. Cho, C. C. Gnade, B. E. |
| book_url | http://dx.doi.org/10.1063/1.108154 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218240996 |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | We have studied the visible photoluminescence (PL) and microstructure of amorphous Si (a-Si) after annealing and etching. The a-Si layers were grown on (100)Si substrates and partially crystallized by annealing between 550–1150 °C. Porous Si layers (PSLs) were then produced by etching in HF-HNO3. While no visible PL was observed from unannealed and etched a-Si, visible PL was detected after annealing and etching. The observation of visible PL after etching coincided with the observation of Si microcrystallites in the annealed layer. The results suggest that an initial crystalline structure is important for fabricating luminescent PSLs. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1992 |
| publikationsjahr_facette | 1992 |
| publikationsjahr_intervall | 8009:1990-1994 |
| publikationsjahr_sort | 1992 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 61 (1992), S. 2467-2469 |
| search_space | articles |
| shingle_author_1 | Jung, K. H. Shih, S. Kwong, D. L. Cho, C. C. Gnade, B. E. |
| shingle_author_2 | Jung, K. H. Shih, S. Kwong, D. L. Cho, C. C. Gnade, B. E. |
| shingle_author_3 | Jung, K. H. Shih, S. Kwong, D. L. Cho, C. C. Gnade, B. E. |
| shingle_author_4 | Jung, K. H. Shih, S. Kwong, D. L. Cho, C. C. Gnade, B. E. |
| shingle_catch_all_1 | Jung, K. H. Shih, S. Kwong, D. L. Cho, C. C. Gnade, B. E. Visible photoluminescence from porous Si formed by annealing and chemically etching amorphous Si We have studied the visible photoluminescence (PL) and microstructure of amorphous Si (a-Si) after annealing and etching. The a-Si layers were grown on (100)Si substrates and partially crystallized by annealing between 550–1150 °C. Porous Si layers (PSLs) were then produced by etching in HF-HNO3. While no visible PL was observed from unannealed and etched a-Si, visible PL was detected after annealing and etching. The observation of visible PL after etching coincided with the observation of Si microcrystallites in the annealed layer. The results suggest that an initial crystalline structure is important for fabricating luminescent PSLs. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Jung, K. H. Shih, S. Kwong, D. L. Cho, C. C. Gnade, B. E. Visible photoluminescence from porous Si formed by annealing and chemically etching amorphous Si We have studied the visible photoluminescence (PL) and microstructure of amorphous Si (a-Si) after annealing and etching. The a-Si layers were grown on (100)Si substrates and partially crystallized by annealing between 550–1150 °C. Porous Si layers (PSLs) were then produced by etching in HF-HNO3. While no visible PL was observed from unannealed and etched a-Si, visible PL was detected after annealing and etching. The observation of visible PL after etching coincided with the observation of Si microcrystallites in the annealed layer. The results suggest that an initial crystalline structure is important for fabricating luminescent PSLs. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Jung, K. H. Shih, S. Kwong, D. L. Cho, C. C. Gnade, B. E. Visible photoluminescence from porous Si formed by annealing and chemically etching amorphous Si We have studied the visible photoluminescence (PL) and microstructure of amorphous Si (a-Si) after annealing and etching. The a-Si layers were grown on (100)Si substrates and partially crystallized by annealing between 550–1150 °C. Porous Si layers (PSLs) were then produced by etching in HF-HNO3. While no visible PL was observed from unannealed and etched a-Si, visible PL was detected after annealing and etching. The observation of visible PL after etching coincided with the observation of Si microcrystallites in the annealed layer. The results suggest that an initial crystalline structure is important for fabricating luminescent PSLs. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Jung, K. H. Shih, S. Kwong, D. L. Cho, C. C. Gnade, B. E. Visible photoluminescence from porous Si formed by annealing and chemically etching amorphous Si We have studied the visible photoluminescence (PL) and microstructure of amorphous Si (a-Si) after annealing and etching. The a-Si layers were grown on (100)Si substrates and partially crystallized by annealing between 550–1150 °C. Porous Si layers (PSLs) were then produced by etching in HF-HNO3. While no visible PL was observed from unannealed and etched a-Si, visible PL was detected after annealing and etching. The observation of visible PL after etching coincided with the observation of Si microcrystallites in the annealed layer. The results suggest that an initial crystalline structure is important for fabricating luminescent PSLs. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | Visible photoluminescence from porous Si formed by annealing and chemically etching amorphous Si |
| shingle_title_2 | Visible photoluminescence from porous Si formed by annealing and chemically etching amorphous Si |
| shingle_title_3 | Visible photoluminescence from porous Si formed by annealing and chemically etching amorphous Si |
| shingle_title_4 | Visible photoluminescence from porous Si formed by annealing and chemically etching amorphous Si |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:48.718Z |
| titel | Visible photoluminescence from porous Si formed by annealing and chemically etching amorphous Si |
| titel_suche | Visible photoluminescence from porous Si formed by annealing and chemically etching amorphous Si |
| topic | U |
| uid | nat_lic_papers_NLZ218240996 |