Growth of InAs on diamond (001) by molecular beam epitaxy
Williams, K. E. ; Tarsa, E. J. ; Speck, J. S.
Woodbury, NY : American Institute of Physics (AIP)
Published 1992
Woodbury, NY : American Institute of Physics (AIP)
Published 1992
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Highly oriented InAs films have been grown on natural diamond by MBE. InAs growths were carried out on diamond and on lattice-matched III–V substrates at 250, 300, and 470 °C. The highest quality films (smoothest surface and highest degree of crystallinity) were obtained at 300 °C. X-ray diffraction data indicate that the films have a strong [111] surface normal orientation. RHEED data indicate that the InAs forms a polyvariant thin film with alignment parallel to the interface of one of the 〈110〉InAs directions with one of the 〈110〉diamond directions.
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| Type of Medium: |
Electronic Resource
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| URL: |