High-speed InP/InGaAs double-heterostructure bipolar transistors with suppressed collector current blocking
Kurishima, K. ; Nakajima, H. ; Kobayashi, T. ; Matsuoka, Y. ; Ishibashi, T.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993
Woodbury, NY : American Institute of Physics (AIP)
Published 1993
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
InP/InGaAs double-heterostructure bipolar transistors (DHBTs), incorporating a new collector structure featuring "pn pair doping'' in the heterointerface vicinity, have been fabricated using a low-pressure metalorganic chemical vapor deposition (MOCVD) method. These transistors provide high collector current densities over 1×105 A/cm2, indicating the successful suppression of current blocking. S-parameter measurements determine the high current gain cutoff frequencies of 130 GHz. These values favorably compare with those of conventional InGaAs-collector HBTs fabricated for comparison, suggesting that the InP collectors have excellent electron transport properties.
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| Type of Medium: |
Electronic Resource
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| URL: |