High-mobility p-channel metal-oxide-semiconductor field-effect transistor on strained Si
Nayak, D. K. ; Woo, J. C. S. ; Park, J. S. ; Wang, K. L. ; MacWilliams, K. P.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993
Woodbury, NY : American Institute of Physics (AIP)
Published 1993
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
An enhancement-mode p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) is fabricated on a strained Si layer for the first time. A biaxial strain in a thin Si layer is produced by pseudomorphically growing this layer on a Ge0.25Si0.75 buffer layer which is grown on a Si substrate. At higher magnitude of gate bias, channel mobility of a strained Si PMOSFET has been found to be 50% higher than that of an identically processed conventional Si PMOSFET.
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| Type of Medium: |
Electronic Resource
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| URL: |