Imaging-plate plane-wave x-ray topography of local lattice distribution due to growth striations in silicon crystals

Maekawa, I. ; Kudo, Y. ; Kojima, S. ; Kawado, S. ; Ishikawa, T.

Woodbury, NY : American Institute of Physics (AIP)
Published 1993
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A newly developed imaging-plate plane-wave x-ray topography (IPPWT) method has been successfully applied to the quantitative analysis of local lattice distortion due to growth striations in magnetic-field-applied Czochralski silicon single crystals. IPPWT was found to possess sufficient spatial resolution to accurately measure variations of growth-induced local lattice distortions (Δd/d and Δα). The advantageous features of IPPWT, in comparison with conventional photographic-plate plane-wave x-ray topography, are a wide latitude in x-ray exposure conditions, better x-ray intensity linearity for performing quantitative analysis, and convenience in image processing and data handling.
Type of Medium:
Electronic Resource
URL: