Hot electron dynamics study by terahertz radiation from large aperture GaAs p-i-n diodes

Xu, L. ; Hu, B. B. ; Xin, W. ; Auston, D. H. ; Morse, J. D.

Woodbury, NY : American Institute of Physics (AIP)
Published 1993
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Subpicosecond electromagnetic pulses having tetrahertz (THz) bandwidths have been generated from large aperture GaAs p-i-n diodes under bias by illumination with femtosecond optical pulses. The amplitude and shape of the radiated pulses change with the applied bias and the wavelength of the optical pulses illuminating the p-i-n diode. Comparing this radiation with THz radiation from large aperture Si p-i-n diodes provides evidence of velocity overshoot in the transient response of optically injected electrons in GaAs.
Type of Medium:
Electronic Resource
URL:
_version_ 1798289624001413120
autor Xu, L.
Hu, B. B.
Xin, W.
Auston, D. H.
Morse, J. D.
autorsonst Xu, L.
Hu, B. B.
Xin, W.
Auston, D. H.
Morse, J. D.
book_url http://dx.doi.org/10.1063/1.109010
datenlieferant nat_lic_papers
hauptsatz hsatz_simple
identnr NLZ218227299
iqvoc_descriptor_title iqvoc_00000633:diodes
issn 1077-3118
journal_name Applied Physics Letters
materialart 1
notes Subpicosecond electromagnetic pulses having tetrahertz (THz) bandwidths have been generated from large aperture GaAs p-i-n diodes under bias by illumination with femtosecond optical pulses. The amplitude and shape of the radiated pulses change with the applied bias and the wavelength of the optical pulses illuminating the p-i-n diode. Comparing this radiation with THz radiation from large aperture Si p-i-n diodes provides evidence of velocity overshoot in the transient response of optically injected electrons in GaAs.
package_name American Institute of Physics (AIP)
publikationsjahr_anzeige 1993
publikationsjahr_facette 1993
publikationsjahr_intervall 8009:1990-1994
publikationsjahr_sort 1993
publikationsort Woodbury, NY
publisher American Institute of Physics (AIP)
reference 62 (1993), S. 3507-3509
search_space articles
shingle_author_1 Xu, L.
Hu, B. B.
Xin, W.
Auston, D. H.
Morse, J. D.
shingle_author_2 Xu, L.
Hu, B. B.
Xin, W.
Auston, D. H.
Morse, J. D.
shingle_author_3 Xu, L.
Hu, B. B.
Xin, W.
Auston, D. H.
Morse, J. D.
shingle_author_4 Xu, L.
Hu, B. B.
Xin, W.
Auston, D. H.
Morse, J. D.
shingle_catch_all_1 Xu, L.
Hu, B. B.
Xin, W.
Auston, D. H.
Morse, J. D.
Hot electron dynamics study by terahertz radiation from large aperture GaAs p-i-n diodes
Subpicosecond electromagnetic pulses having tetrahertz (THz) bandwidths have been generated from large aperture GaAs p-i-n diodes under bias by illumination with femtosecond optical pulses. The amplitude and shape of the radiated pulses change with the applied bias and the wavelength of the optical pulses illuminating the p-i-n diode. Comparing this radiation with THz radiation from large aperture Si p-i-n diodes provides evidence of velocity overshoot in the transient response of optically injected electrons in GaAs.
1077-3118
10773118
American Institute of Physics (AIP)
shingle_catch_all_2 Xu, L.
Hu, B. B.
Xin, W.
Auston, D. H.
Morse, J. D.
Hot electron dynamics study by terahertz radiation from large aperture GaAs p-i-n diodes
Subpicosecond electromagnetic pulses having tetrahertz (THz) bandwidths have been generated from large aperture GaAs p-i-n diodes under bias by illumination with femtosecond optical pulses. The amplitude and shape of the radiated pulses change with the applied bias and the wavelength of the optical pulses illuminating the p-i-n diode. Comparing this radiation with THz radiation from large aperture Si p-i-n diodes provides evidence of velocity overshoot in the transient response of optically injected electrons in GaAs.
1077-3118
10773118
American Institute of Physics (AIP)
shingle_catch_all_3 Xu, L.
Hu, B. B.
Xin, W.
Auston, D. H.
Morse, J. D.
Hot electron dynamics study by terahertz radiation from large aperture GaAs p-i-n diodes
Subpicosecond electromagnetic pulses having tetrahertz (THz) bandwidths have been generated from large aperture GaAs p-i-n diodes under bias by illumination with femtosecond optical pulses. The amplitude and shape of the radiated pulses change with the applied bias and the wavelength of the optical pulses illuminating the p-i-n diode. Comparing this radiation with THz radiation from large aperture Si p-i-n diodes provides evidence of velocity overshoot in the transient response of optically injected electrons in GaAs.
1077-3118
10773118
American Institute of Physics (AIP)
shingle_catch_all_4 Xu, L.
Hu, B. B.
Xin, W.
Auston, D. H.
Morse, J. D.
Hot electron dynamics study by terahertz radiation from large aperture GaAs p-i-n diodes
Subpicosecond electromagnetic pulses having tetrahertz (THz) bandwidths have been generated from large aperture GaAs p-i-n diodes under bias by illumination with femtosecond optical pulses. The amplitude and shape of the radiated pulses change with the applied bias and the wavelength of the optical pulses illuminating the p-i-n diode. Comparing this radiation with THz radiation from large aperture Si p-i-n diodes provides evidence of velocity overshoot in the transient response of optically injected electrons in GaAs.
1077-3118
10773118
American Institute of Physics (AIP)
shingle_title_1 Hot electron dynamics study by terahertz radiation from large aperture GaAs p-i-n diodes
shingle_title_2 Hot electron dynamics study by terahertz radiation from large aperture GaAs p-i-n diodes
shingle_title_3 Hot electron dynamics study by terahertz radiation from large aperture GaAs p-i-n diodes
shingle_title_4 Hot electron dynamics study by terahertz radiation from large aperture GaAs p-i-n diodes
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timestamp 2024-05-06T08:03:47.756Z
titel Hot electron dynamics study by terahertz radiation from large aperture GaAs p-i-n diodes
titel_suche Hot electron dynamics study by terahertz radiation from large aperture GaAs p-i-n diodes
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