Hot electron dynamics study by terahertz radiation from large aperture GaAs p-i-n diodes
Xu, L. ; Hu, B. B. ; Xin, W. ; Auston, D. H. ; Morse, J. D.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993
Woodbury, NY : American Institute of Physics (AIP)
Published 1993
ISSN: |
1077-3118
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Source: |
AIP Digital Archive
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Topics: |
Physics
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Notes: |
Subpicosecond electromagnetic pulses having tetrahertz (THz) bandwidths have been generated from large aperture GaAs p-i-n diodes under bias by illumination with femtosecond optical pulses. The amplitude and shape of the radiated pulses change with the applied bias and the wavelength of the optical pulses illuminating the p-i-n diode. Comparing this radiation with THz radiation from large aperture Si p-i-n diodes provides evidence of velocity overshoot in the transient response of optically injected electrons in GaAs.
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Type of Medium: |
Electronic Resource
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URL: |
_version_ | 1798289624001413120 |
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autor | Xu, L. Hu, B. B. Xin, W. Auston, D. H. Morse, J. D. |
autorsonst | Xu, L. Hu, B. B. Xin, W. Auston, D. H. Morse, J. D. |
book_url | http://dx.doi.org/10.1063/1.109010 |
datenlieferant | nat_lic_papers |
hauptsatz | hsatz_simple |
identnr | NLZ218227299 |
iqvoc_descriptor_title | iqvoc_00000633:diodes |
issn | 1077-3118 |
journal_name | Applied Physics Letters |
materialart | 1 |
notes | Subpicosecond electromagnetic pulses having tetrahertz (THz) bandwidths have been generated from large aperture GaAs p-i-n diodes under bias by illumination with femtosecond optical pulses. The amplitude and shape of the radiated pulses change with the applied bias and the wavelength of the optical pulses illuminating the p-i-n diode. Comparing this radiation with THz radiation from large aperture Si p-i-n diodes provides evidence of velocity overshoot in the transient response of optically injected electrons in GaAs. |
package_name | American Institute of Physics (AIP) |
publikationsjahr_anzeige | 1993 |
publikationsjahr_facette | 1993 |
publikationsjahr_intervall | 8009:1990-1994 |
publikationsjahr_sort | 1993 |
publikationsort | Woodbury, NY |
publisher | American Institute of Physics (AIP) |
reference | 62 (1993), S. 3507-3509 |
search_space | articles |
shingle_author_1 | Xu, L. Hu, B. B. Xin, W. Auston, D. H. Morse, J. D. |
shingle_author_2 | Xu, L. Hu, B. B. Xin, W. Auston, D. H. Morse, J. D. |
shingle_author_3 | Xu, L. Hu, B. B. Xin, W. Auston, D. H. Morse, J. D. |
shingle_author_4 | Xu, L. Hu, B. B. Xin, W. Auston, D. H. Morse, J. D. |
shingle_catch_all_1 | Xu, L. Hu, B. B. Xin, W. Auston, D. H. Morse, J. D. Hot electron dynamics study by terahertz radiation from large aperture GaAs p-i-n diodes Subpicosecond electromagnetic pulses having tetrahertz (THz) bandwidths have been generated from large aperture GaAs p-i-n diodes under bias by illumination with femtosecond optical pulses. The amplitude and shape of the radiated pulses change with the applied bias and the wavelength of the optical pulses illuminating the p-i-n diode. Comparing this radiation with THz radiation from large aperture Si p-i-n diodes provides evidence of velocity overshoot in the transient response of optically injected electrons in GaAs. 1077-3118 10773118 American Institute of Physics (AIP) |
shingle_catch_all_2 | Xu, L. Hu, B. B. Xin, W. Auston, D. H. Morse, J. D. Hot electron dynamics study by terahertz radiation from large aperture GaAs p-i-n diodes Subpicosecond electromagnetic pulses having tetrahertz (THz) bandwidths have been generated from large aperture GaAs p-i-n diodes under bias by illumination with femtosecond optical pulses. The amplitude and shape of the radiated pulses change with the applied bias and the wavelength of the optical pulses illuminating the p-i-n diode. Comparing this radiation with THz radiation from large aperture Si p-i-n diodes provides evidence of velocity overshoot in the transient response of optically injected electrons in GaAs. 1077-3118 10773118 American Institute of Physics (AIP) |
shingle_catch_all_3 | Xu, L. Hu, B. B. Xin, W. Auston, D. H. Morse, J. D. Hot electron dynamics study by terahertz radiation from large aperture GaAs p-i-n diodes Subpicosecond electromagnetic pulses having tetrahertz (THz) bandwidths have been generated from large aperture GaAs p-i-n diodes under bias by illumination with femtosecond optical pulses. The amplitude and shape of the radiated pulses change with the applied bias and the wavelength of the optical pulses illuminating the p-i-n diode. Comparing this radiation with THz radiation from large aperture Si p-i-n diodes provides evidence of velocity overshoot in the transient response of optically injected electrons in GaAs. 1077-3118 10773118 American Institute of Physics (AIP) |
shingle_catch_all_4 | Xu, L. Hu, B. B. Xin, W. Auston, D. H. Morse, J. D. Hot electron dynamics study by terahertz radiation from large aperture GaAs p-i-n diodes Subpicosecond electromagnetic pulses having tetrahertz (THz) bandwidths have been generated from large aperture GaAs p-i-n diodes under bias by illumination with femtosecond optical pulses. The amplitude and shape of the radiated pulses change with the applied bias and the wavelength of the optical pulses illuminating the p-i-n diode. Comparing this radiation with THz radiation from large aperture Si p-i-n diodes provides evidence of velocity overshoot in the transient response of optically injected electrons in GaAs. 1077-3118 10773118 American Institute of Physics (AIP) |
shingle_title_1 | Hot electron dynamics study by terahertz radiation from large aperture GaAs p-i-n diodes |
shingle_title_2 | Hot electron dynamics study by terahertz radiation from large aperture GaAs p-i-n diodes |
shingle_title_3 | Hot electron dynamics study by terahertz radiation from large aperture GaAs p-i-n diodes |
shingle_title_4 | Hot electron dynamics study by terahertz radiation from large aperture GaAs p-i-n diodes |
sigel_instance_filter | dkfz geomar wilbert ipn albert |
source_archive | AIP Digital Archive |
timestamp | 2024-05-06T08:03:47.756Z |
titel | Hot electron dynamics study by terahertz radiation from large aperture GaAs p-i-n diodes |
titel_suche | Hot electron dynamics study by terahertz radiation from large aperture GaAs p-i-n diodes |
topic | U |
uid | nat_lic_papers_NLZ218227299 |