Uniformity of GexSi1−x epitaxial layers grown by ultrahigh vacuum chemical-vapor deposition
Greve, D. W. ; McLaughlin, G. ; Capano, M. A. ; Racanelli, M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993
Woodbury, NY : American Institute of Physics (AIP)
Published 1993
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
We report on the uniformity of composition and thickness of epitaxial GexSi1−x layers grown by ultrahigh vacuum chemical-vapor deposition. Double-crystal x-ray diffractometry showed that variations in thickness are less than ±2.2% and variations in composition less than ±2.5% from center to edge of a 75 mm wafer. The variations observed are consistent with the predictions of Monte Carlo simulations.
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| Type of Medium: |
Electronic Resource
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| URL: |