Direct evidence for substitutional Li after ion-implantation into highly phosphorus-doped Si
Wahl, U. ; Hofsäss, H. ; Jahn, S. G. ; Winter, S. ; Recknagel, E.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993
Woodbury, NY : American Institute of Physics (AIP)
Published 1993
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Radioactive 8Li (t1/2=0.8 s) was ion implanted into single-crystalline n-Si of low resistivity (9×1019 P cm−3) at temperatures between 50 and 670 K. Channeling measurements of the alpha-particles emitted during the decay of 8Li gave direct evidence that 35% of the implanted Li occupied substitutional sites between 350 and 670 K. Below room temperature the major fraction of Li was found to be on tetrahedral sites. The increase in the substitutional fraction around room temperature is attributed to diffusion of Li and capture by vacancy-related defects.
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| Type of Medium: |
Electronic Resource
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| URL: |