Formation of epitaxial Tl2Ba2CaCu2O8 thin films at low temperature in pure argon
Yan, S. L. ; Fang, L. ; Song, Q. X. ; Yan, J. ; Zhu, Y. P. ; Chen, J. H. ; Zhang, S. B.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993
Woodbury, NY : American Institute of Physics (AIP)
Published 1993
ISSN: |
1077-3118
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Source: |
AIP Digital Archive
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Topics: |
Physics
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Notes: |
Mirror-like Tl2Ba2CaCu2O8 thin films have been reproducibly prepared on (001)LaAlO3 substrates by dc magnetron sputtering using 80% argon and 20% oxygen and post-annealing at temperatures of 720–760 °C in 1 atm pure argon. X-ray diffraction patterns of θ-2θ scans, φ scans, and Read camera photographs prove that the thin films are strongly textured with the c-axis perpendicular to the substrate surfaces and epitaxially grown to the substrate with Tl2Ba2CaCu2O8(100) parallel to the LaAlO3(100). The zero resistance temperatures are in the range of 105.2–108.6 K for the 0.2–1.0-μm-thick films. The critical current density of 5.3×106 A/cm2 at 77 K has been obtained at zero magnetic field for a 0.4-μm-thick film.
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Type of Medium: |
Electronic Resource
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URL: |