Diffusion and doping of Si into GaAs from undoped SiOx/SiN film
Matsushita, S. ; Terada, S. ; Fujii, E. ; Harada, Y.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993
Woodbury, NY : American Institute of Physics (AIP)
Published 1993
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The diffusion and n-type doping of Si into GaAs from a novel diffusion source consisting of an undoped SiOx/SiN double-layered film were achieved by rapid thermal annealing at 860–940 °C. The film properties of the double-layered films employed as Si diffusion sources are experimentally presented. The characteristics of the Si diffused layers were investigated by secondary ion mass spectrometry, capacitance-voltage measurement, and the Hall method. The carrier profiles exceeded 2×1018 cm−3 and featured an abrupt diffusion front, while a maximum electron concentration of 6×1018 cm−3 was obtained at 940 °C. The diffused Si profiles were consistent with the SiGa+−VGa− pair diffusion model.
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| Type of Medium: |
Electronic Resource
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| URL: |