Effects of a predeposited boron layer during the epitaxial growth of Ge on CaF2
Cho, C.-C. ; Liu, H.-Y. ; Magel, L. K. ; Anthony, J. M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993
Woodbury, NY : American Institute of Physics (AIP)
Published 1993
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Using a thin predeposited B layer prior to the epitaxial growth of Ge on CaF2, we have obtained significantly improved Ge crystalline quality and surface morphology for Ge/CaF2/Si(111) and Ge/CaF2/Si(100) structures. Although B acts as a surfactant in suppressing island formation, it does not migrate to the growth front during Ge growth, which was widely observed in the surfactant-assisted epitaxial growth of Ge on Si. The B predeposit also prevents Ca from migrating to the Ge surface, and promotes A-type epitaxy of Ge(111) when Si(111) substrates are used.
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| Type of Medium: |
Electronic Resource
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| URL: |