Multiple peak photoluminescence of porous silicon
Cheah, K. W. ; Chan, Tommy ; Lee, W. L. ; Teng, Da ; Zheng, W. H. ; Wang, Q. M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993
Woodbury, NY : American Institute of Physics (AIP)
Published 1993
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The photoluminescence (PL) response of porous silicon is usually in the form of a single broad peak. Recently, however, PL response with two peaks has been reported. Here we report the observation of multiple peaks in the PL spectrum of porous silicon. A simple modeling of the line shape indicates that four peaks exist within the response curve, and analysis suggests that the PL of porous silicon is derived from quantum confinement in the silicon crystallites. The line shapes can be due to either minibands within the conduction and valence bands or crystallite size variation or a combination of the two.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289623057694720 |
|---|---|
| autor | Cheah, K. W. Chan, Tommy Lee, W. L. Teng, Da Zheng, W. H. Wang, Q. M. |
| autorsonst | Cheah, K. W. Chan, Tommy Lee, W. L. Teng, Da Zheng, W. H. Wang, Q. M. |
| book_url | http://dx.doi.org/10.1063/1.110121 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218216424 |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | The photoluminescence (PL) response of porous silicon is usually in the form of a single broad peak. Recently, however, PL response with two peaks has been reported. Here we report the observation of multiple peaks in the PL spectrum of porous silicon. A simple modeling of the line shape indicates that four peaks exist within the response curve, and analysis suggests that the PL of porous silicon is derived from quantum confinement in the silicon crystallites. The line shapes can be due to either minibands within the conduction and valence bands or crystallite size variation or a combination of the two. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1993 |
| publikationsjahr_facette | 1993 |
| publikationsjahr_intervall | 8009:1990-1994 |
| publikationsjahr_sort | 1993 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 63 (1993), S. 3464-3466 |
| search_space | articles |
| shingle_author_1 | Cheah, K. W. Chan, Tommy Lee, W. L. Teng, Da Zheng, W. H. Wang, Q. M. |
| shingle_author_2 | Cheah, K. W. Chan, Tommy Lee, W. L. Teng, Da Zheng, W. H. Wang, Q. M. |
| shingle_author_3 | Cheah, K. W. Chan, Tommy Lee, W. L. Teng, Da Zheng, W. H. Wang, Q. M. |
| shingle_author_4 | Cheah, K. W. Chan, Tommy Lee, W. L. Teng, Da Zheng, W. H. Wang, Q. M. |
| shingle_catch_all_1 | Cheah, K. W. Chan, Tommy Lee, W. L. Teng, Da Zheng, W. H. Wang, Q. M. Multiple peak photoluminescence of porous silicon The photoluminescence (PL) response of porous silicon is usually in the form of a single broad peak. Recently, however, PL response with two peaks has been reported. Here we report the observation of multiple peaks in the PL spectrum of porous silicon. A simple modeling of the line shape indicates that four peaks exist within the response curve, and analysis suggests that the PL of porous silicon is derived from quantum confinement in the silicon crystallites. The line shapes can be due to either minibands within the conduction and valence bands or crystallite size variation or a combination of the two. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Cheah, K. W. Chan, Tommy Lee, W. L. Teng, Da Zheng, W. H. Wang, Q. M. Multiple peak photoluminescence of porous silicon The photoluminescence (PL) response of porous silicon is usually in the form of a single broad peak. Recently, however, PL response with two peaks has been reported. Here we report the observation of multiple peaks in the PL spectrum of porous silicon. A simple modeling of the line shape indicates that four peaks exist within the response curve, and analysis suggests that the PL of porous silicon is derived from quantum confinement in the silicon crystallites. The line shapes can be due to either minibands within the conduction and valence bands or crystallite size variation or a combination of the two. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Cheah, K. W. Chan, Tommy Lee, W. L. Teng, Da Zheng, W. H. Wang, Q. M. Multiple peak photoluminescence of porous silicon The photoluminescence (PL) response of porous silicon is usually in the form of a single broad peak. Recently, however, PL response with two peaks has been reported. Here we report the observation of multiple peaks in the PL spectrum of porous silicon. A simple modeling of the line shape indicates that four peaks exist within the response curve, and analysis suggests that the PL of porous silicon is derived from quantum confinement in the silicon crystallites. The line shapes can be due to either minibands within the conduction and valence bands or crystallite size variation or a combination of the two. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Cheah, K. W. Chan, Tommy Lee, W. L. Teng, Da Zheng, W. H. Wang, Q. M. Multiple peak photoluminescence of porous silicon The photoluminescence (PL) response of porous silicon is usually in the form of a single broad peak. Recently, however, PL response with two peaks has been reported. Here we report the observation of multiple peaks in the PL spectrum of porous silicon. A simple modeling of the line shape indicates that four peaks exist within the response curve, and analysis suggests that the PL of porous silicon is derived from quantum confinement in the silicon crystallites. The line shapes can be due to either minibands within the conduction and valence bands or crystallite size variation or a combination of the two. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | Multiple peak photoluminescence of porous silicon |
| shingle_title_2 | Multiple peak photoluminescence of porous silicon |
| shingle_title_3 | Multiple peak photoluminescence of porous silicon |
| shingle_title_4 | Multiple peak photoluminescence of porous silicon |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:46.876Z |
| titel | Multiple peak photoluminescence of porous silicon |
| titel_suche | Multiple peak photoluminescence of porous silicon |
| topic | U |
| uid | nat_lic_papers_NLZ218216424 |