Hydrogenating silicon dioxide in an electron cyclotron plasma
Delfino, M. ; Tsai, W. ; Reynolds, G. ; Day, M. E.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993
Woodbury, NY : American Institute of Physics (AIP)
Published 1993
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The hydrogenating effect of a low-temperature, electron cyclotron resonance excited H2 plasma on the surface chemistry of thermal SiO2 films is analyzed in situ by x-ray photoemission spectroscopy and static secondary ion mass spectrometry. Hydrogenation with this nominal 10 eV proton flux results in Si-(O4), H-Si-(O3), (H2)-Si-(O2), (H2)-Si-O, and H-Si-(Si3) bonding states to the complete exclusion of Si—OH bond formation. A simple thermodynamic argument accounts for the exclusivity of Si—H bonds terminating the outermost (O3)-Si-O-Si-(O3) network of a thick SiOx〈2 film, thereby transforming what is normally a hydrophilic surface into one that is hydrophobic.
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| Type of Medium: |
Electronic Resource
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| URL: |