Strained-layer InSb/GaSb quantum wells grown by metalorganic vapor phase epitaxy
| ISSN: |
1077-3118
|
|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
InSb/GaSb quantum well structures have been prepared by atmospheric pressure metalorganic vapor phase epitaxy. Strong sharp photoluminescence emission peaks with a full width at half- maximum of 6–11 meV were obtained for the quantum well structures with well thicknesses of 0.35–0.88 nm, suggesting nearly atomically planar interfaces. The observed photoluminescence transition energies are in excellent agreement with the calculated values using a standard finite square well model taking into account strain. A broadening of the predominant photoluminescence emission peak was observed for quantum well structures with well thicknesses above 1 nm, indicating nonplanar growth.
|
| Type of Medium: |
Electronic Resource
|
| URL: |
| _version_ | 1798289623209738240 |
|---|---|
| autor | Qian, L. Q. Wessels, B. W. |
| autorsonst | Qian, L. Q. Wessels, B. W. |
| book_url | http://dx.doi.org/10.1063/1.109971 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ21821460X |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | InSb/GaSb quantum well structures have been prepared by atmospheric pressure metalorganic vapor phase epitaxy. Strong sharp photoluminescence emission peaks with a full width at half- maximum of 6–11 meV were obtained for the quantum well structures with well thicknesses of 0.35–0.88 nm, suggesting nearly atomically planar interfaces. The observed photoluminescence transition energies are in excellent agreement with the calculated values using a standard finite square well model taking into account strain. A broadening of the predominant photoluminescence emission peak was observed for quantum well structures with well thicknesses above 1 nm, indicating nonplanar growth. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1993 |
| publikationsjahr_facette | 1993 |
| publikationsjahr_intervall | 8009:1990-1994 |
| publikationsjahr_sort | 1993 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 63 (1993), S. 628-630 |
| search_space | articles |
| shingle_author_1 | Qian, L. Q. Wessels, B. W. |
| shingle_author_2 | Qian, L. Q. Wessels, B. W. |
| shingle_author_3 | Qian, L. Q. Wessels, B. W. |
| shingle_author_4 | Qian, L. Q. Wessels, B. W. |
| shingle_catch_all_1 | Qian, L. Q. Wessels, B. W. Strained-layer InSb/GaSb quantum wells grown by metalorganic vapor phase epitaxy InSb/GaSb quantum well structures have been prepared by atmospheric pressure metalorganic vapor phase epitaxy. Strong sharp photoluminescence emission peaks with a full width at half- maximum of 6–11 meV were obtained for the quantum well structures with well thicknesses of 0.35–0.88 nm, suggesting nearly atomically planar interfaces. The observed photoluminescence transition energies are in excellent agreement with the calculated values using a standard finite square well model taking into account strain. A broadening of the predominant photoluminescence emission peak was observed for quantum well structures with well thicknesses above 1 nm, indicating nonplanar growth. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Qian, L. Q. Wessels, B. W. Strained-layer InSb/GaSb quantum wells grown by metalorganic vapor phase epitaxy InSb/GaSb quantum well structures have been prepared by atmospheric pressure metalorganic vapor phase epitaxy. Strong sharp photoluminescence emission peaks with a full width at half- maximum of 6–11 meV were obtained for the quantum well structures with well thicknesses of 0.35–0.88 nm, suggesting nearly atomically planar interfaces. The observed photoluminescence transition energies are in excellent agreement with the calculated values using a standard finite square well model taking into account strain. A broadening of the predominant photoluminescence emission peak was observed for quantum well structures with well thicknesses above 1 nm, indicating nonplanar growth. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Qian, L. Q. Wessels, B. W. Strained-layer InSb/GaSb quantum wells grown by metalorganic vapor phase epitaxy InSb/GaSb quantum well structures have been prepared by atmospheric pressure metalorganic vapor phase epitaxy. Strong sharp photoluminescence emission peaks with a full width at half- maximum of 6–11 meV were obtained for the quantum well structures with well thicknesses of 0.35–0.88 nm, suggesting nearly atomically planar interfaces. The observed photoluminescence transition energies are in excellent agreement with the calculated values using a standard finite square well model taking into account strain. A broadening of the predominant photoluminescence emission peak was observed for quantum well structures with well thicknesses above 1 nm, indicating nonplanar growth. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Qian, L. Q. Wessels, B. W. Strained-layer InSb/GaSb quantum wells grown by metalorganic vapor phase epitaxy InSb/GaSb quantum well structures have been prepared by atmospheric pressure metalorganic vapor phase epitaxy. Strong sharp photoluminescence emission peaks with a full width at half- maximum of 6–11 meV were obtained for the quantum well structures with well thicknesses of 0.35–0.88 nm, suggesting nearly atomically planar interfaces. The observed photoluminescence transition energies are in excellent agreement with the calculated values using a standard finite square well model taking into account strain. A broadening of the predominant photoluminescence emission peak was observed for quantum well structures with well thicknesses above 1 nm, indicating nonplanar growth. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | Strained-layer InSb/GaSb quantum wells grown by metalorganic vapor phase epitaxy |
| shingle_title_2 | Strained-layer InSb/GaSb quantum wells grown by metalorganic vapor phase epitaxy |
| shingle_title_3 | Strained-layer InSb/GaSb quantum wells grown by metalorganic vapor phase epitaxy |
| shingle_title_4 | Strained-layer InSb/GaSb quantum wells grown by metalorganic vapor phase epitaxy |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:46.784Z |
| titel | Strained-layer InSb/GaSb quantum wells grown by metalorganic vapor phase epitaxy |
| titel_suche | Strained-layer InSb/GaSb quantum wells grown by metalorganic vapor phase epitaxy |
| topic | U |
| uid | nat_lic_papers_NLZ21821460X |