Electrical and optical properties of PbTiO3 thin films on p-Si grown by metalorganic chemical vapor deposition at low temperature
Yoon, Y. S. ; Kang, W. N. ; Yom, S. S. ; Kim, T. W. ; Jung, M. ; Kim, H. J. ; Park, T. H. ; Na, H. K.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993
Woodbury, NY : American Institute of Physics (AIP)
Published 1993
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Metalorganic chemical vapor deposition of PbTiO3 using Pb (tmhd)2, Ti(OC3H7)4, and N2O via thermal pyrolysis at relatively low temperature (∼500 °C) was performed in order to produce PbTiO3 insulator gates with high quality PbTiO3/p-Si interfaces. Raman spectroscopy showed the several optical phonon modes of the PbTiO3/p-Si structure. The stoichiometry of the PbTiO3 films was observed by Auger electron spectroscopy. Room-temperature current-voltage and capacitance-voltage measurements clearly revealed metal-insulator-semiconductor behavior for the samples with a PbTiO3 insulator gate, and the interface state densities at the PbTiO3/p-Si were approximately 1011 eV−1 cm−2 at the middle of the Si energy gap.
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| Type of Medium: |
Electronic Resource
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| URL: |