Bi1−xSbx/Bi superlattice grown by molecular beam epitaxy
Yi, X. J. ; Wang, H. C. ; DiVenere, A. ; Hou, C. L. ; Chen, J. ; Ketterson, J. B. ; Wong, G. K.
Woodbury, NY : American Institute of Physics (AIP)
Published 1994
Woodbury, NY : American Institute of Physics (AIP)
Published 1994
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Superlattices of Bi1−xSbx/Bi have been grown by molecular beam epitaxy on CdTe(111) substrates. The typical multilayer, consisting of Bi1−xSbx (85 A(ring) with x=0.16) and Bi (75-A(ring)) layers repeated 50 times, was grown at a substrate temperature of 150 °C. The samples were characterized by reflection high-energy electron diffraction (RHEED), θ-2θ x-ray diffraction analysis, and high-resolution transmission electron microscopy. The streaked RHEED patterns with clear Kikuchi lines and the x-ray satellite peaks indicate a good epitaxial layer quality. The bright field transmission electron microscopy image of the superlattice film confirms that a composition modulation exists, even though the Bi1−xSbx and Bi layers have only a slight image contrast.
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| Type of Medium: |
Electronic Resource
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| URL: |