Diffusion barrier effects of transition metals for Cu/M/Si multilayers (M=Cr, Ti, Nb, Mo, Ta, W)
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
In order to find appropriate diffusion barrier materials for Cu, the diffusion of Cu into Si through various barrier metals M (M=Cr, Ti, Nb, Mo, Ta, W) was investigated. The behavior of Cu in Cu/M/Si multilayers was measured after annealing using x-ray diffraction analysis, secondary ion mass spectroscopy, Rutherford backscattering spectroscopy, and electric resistance change. Only Cu/Ta/Si and Cu/W/Si multilayers retained their multilayer structures after annealing at 600 °C×1 h in H2 without resistivity increases. Multilayers of the other metals did not retain their structures after the same annealing condition. This difference in the barrier properties of the transition metals appeared to be related to the metal-Cu binary phase diagrams and their self-diffusion coefficients.
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798289621794160643 |
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| autor | Ono, H. Nakano, T. Ohta, T. |
| autorsonst | Ono, H. Nakano, T. Ohta, T. |
| book_url | http://dx.doi.org/10.1063/1.111875 |
| datenlieferant | nat_lic_papers |
| hauptsatz | hsatz_simple |
| identnr | NLZ218210779 |
| issn | 1077-3118 |
| journal_name | Applied Physics Letters |
| materialart | 1 |
| notes | In order to find appropriate diffusion barrier materials for Cu, the diffusion of Cu into Si through various barrier metals M (M=Cr, Ti, Nb, Mo, Ta, W) was investigated. The behavior of Cu in Cu/M/Si multilayers was measured after annealing using x-ray diffraction analysis, secondary ion mass spectroscopy, Rutherford backscattering spectroscopy, and electric resistance change. Only Cu/Ta/Si and Cu/W/Si multilayers retained their multilayer structures after annealing at 600 °C×1 h in H2 without resistivity increases. Multilayers of the other metals did not retain their structures after the same annealing condition. This difference in the barrier properties of the transition metals appeared to be related to the metal-Cu binary phase diagrams and their self-diffusion coefficients. |
| package_name | American Institute of Physics (AIP) |
| publikationsjahr_anzeige | 1994 |
| publikationsjahr_facette | 1994 |
| publikationsjahr_intervall | 8009:1990-1994 |
| publikationsjahr_sort | 1994 |
| publikationsort | Woodbury, NY |
| publisher | American Institute of Physics (AIP) |
| reference | 64 (1994), S. 1511-1513 |
| search_space | articles |
| shingle_author_1 | Ono, H. Nakano, T. Ohta, T. |
| shingle_author_2 | Ono, H. Nakano, T. Ohta, T. |
| shingle_author_3 | Ono, H. Nakano, T. Ohta, T. |
| shingle_author_4 | Ono, H. Nakano, T. Ohta, T. |
| shingle_catch_all_1 | Ono, H. Nakano, T. Ohta, T. Diffusion barrier effects of transition metals for Cu/M/Si multilayers (M=Cr, Ti, Nb, Mo, Ta, W) In order to find appropriate diffusion barrier materials for Cu, the diffusion of Cu into Si through various barrier metals M (M=Cr, Ti, Nb, Mo, Ta, W) was investigated. The behavior of Cu in Cu/M/Si multilayers was measured after annealing using x-ray diffraction analysis, secondary ion mass spectroscopy, Rutherford backscattering spectroscopy, and electric resistance change. Only Cu/Ta/Si and Cu/W/Si multilayers retained their multilayer structures after annealing at 600 °C×1 h in H2 without resistivity increases. Multilayers of the other metals did not retain their structures after the same annealing condition. This difference in the barrier properties of the transition metals appeared to be related to the metal-Cu binary phase diagrams and their self-diffusion coefficients. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_2 | Ono, H. Nakano, T. Ohta, T. Diffusion barrier effects of transition metals for Cu/M/Si multilayers (M=Cr, Ti, Nb, Mo, Ta, W) In order to find appropriate diffusion barrier materials for Cu, the diffusion of Cu into Si through various barrier metals M (M=Cr, Ti, Nb, Mo, Ta, W) was investigated. The behavior of Cu in Cu/M/Si multilayers was measured after annealing using x-ray diffraction analysis, secondary ion mass spectroscopy, Rutherford backscattering spectroscopy, and electric resistance change. Only Cu/Ta/Si and Cu/W/Si multilayers retained their multilayer structures after annealing at 600 °C×1 h in H2 without resistivity increases. Multilayers of the other metals did not retain their structures after the same annealing condition. This difference in the barrier properties of the transition metals appeared to be related to the metal-Cu binary phase diagrams and their self-diffusion coefficients. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_3 | Ono, H. Nakano, T. Ohta, T. Diffusion barrier effects of transition metals for Cu/M/Si multilayers (M=Cr, Ti, Nb, Mo, Ta, W) In order to find appropriate diffusion barrier materials for Cu, the diffusion of Cu into Si through various barrier metals M (M=Cr, Ti, Nb, Mo, Ta, W) was investigated. The behavior of Cu in Cu/M/Si multilayers was measured after annealing using x-ray diffraction analysis, secondary ion mass spectroscopy, Rutherford backscattering spectroscopy, and electric resistance change. Only Cu/Ta/Si and Cu/W/Si multilayers retained their multilayer structures after annealing at 600 °C×1 h in H2 without resistivity increases. Multilayers of the other metals did not retain their structures after the same annealing condition. This difference in the barrier properties of the transition metals appeared to be related to the metal-Cu binary phase diagrams and their self-diffusion coefficients. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_catch_all_4 | Ono, H. Nakano, T. Ohta, T. Diffusion barrier effects of transition metals for Cu/M/Si multilayers (M=Cr, Ti, Nb, Mo, Ta, W) In order to find appropriate diffusion barrier materials for Cu, the diffusion of Cu into Si through various barrier metals M (M=Cr, Ti, Nb, Mo, Ta, W) was investigated. The behavior of Cu in Cu/M/Si multilayers was measured after annealing using x-ray diffraction analysis, secondary ion mass spectroscopy, Rutherford backscattering spectroscopy, and electric resistance change. Only Cu/Ta/Si and Cu/W/Si multilayers retained their multilayer structures after annealing at 600 °C×1 h in H2 without resistivity increases. Multilayers of the other metals did not retain their structures after the same annealing condition. This difference in the barrier properties of the transition metals appeared to be related to the metal-Cu binary phase diagrams and their self-diffusion coefficients. 1077-3118 10773118 American Institute of Physics (AIP) |
| shingle_title_1 | Diffusion barrier effects of transition metals for Cu/M/Si multilayers (M=Cr, Ti, Nb, Mo, Ta, W) |
| shingle_title_2 | Diffusion barrier effects of transition metals for Cu/M/Si multilayers (M=Cr, Ti, Nb, Mo, Ta, W) |
| shingle_title_3 | Diffusion barrier effects of transition metals for Cu/M/Si multilayers (M=Cr, Ti, Nb, Mo, Ta, W) |
| shingle_title_4 | Diffusion barrier effects of transition metals for Cu/M/Si multilayers (M=Cr, Ti, Nb, Mo, Ta, W) |
| sigel_instance_filter | dkfz geomar wilbert ipn albert |
| source_archive | AIP Digital Archive |
| timestamp | 2024-05-06T08:03:45.336Z |
| titel | Diffusion barrier effects of transition metals for Cu/M/Si multilayers (M=Cr, Ti, Nb, Mo, Ta, W) |
| titel_suche | Diffusion barrier effects of transition metals for Cu/M/Si multilayers (M=Cr, Ti, Nb, Mo, Ta, W) |
| topic | U |
| uid | nat_lic_papers_NLZ218210779 |