AlxGa1−xAs-GaAs-InyGa1−yAs quantum well heterostructure lasers with native oxide current-blocking windows formed on metallized devices
Maranowski, S. A. ; Chen, E. I. ; Holonyak, N. ; Richard, T. A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1994
Woodbury, NY : American Institute of Physics (AIP)
Published 1994
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Data are presented demonstrating improved laser operation of AlxGa1−xAs-GaAs-InyGa1−yAs quantum well heterostructures modified with buried native oxide current-blocking windows. The windows are formed by low temperature (425 °C) anisotropic "wet'' oxidation of an Al0.9Ga0.1As layer exposed at the facets of metallized laser bars. These window devices operate continuously to powers as high as 248 mW/facet (uncoated, ∼10.5 μm aperture), a ∼25% improvement over nonwindow devices.
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| Type of Medium: |
Electronic Resource
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| URL: |