Mobility enhancement in double δ-doped GaAs/InxGa1−xAs/GaAs pseudomorphic structures by grading the heterointerfaces
Wu, C. L. ; Hsu, W. C. ; Shieh, H. M. ; Liu, W. C.
Woodbury, NY : American Institute of Physics (AIP)
Published 1994
Woodbury, NY : American Institute of Physics (AIP)
Published 1994
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
A novel double δ-doped heterostructure employing symmetric graded InGaAs quantum wells as the active channel grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) has been successfully fabricated. The proposed symmetrically graded InGaAs pseudomorphic structure manifests significantly improved electron mobility as high as 5300 (26 000) cm2/V s at 300 (77) K due to superior confinement and to the lower interface roughness scattering at GaAs/InGaAs heterointerfaces. We also carried out photoluminescence (PL) spectra and secondary-ion mass spectrometry (SIMS) profiles to confirm the quality of the proposed structures.
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| Type of Medium: |
Electronic Resource
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| URL: |