Carrier escape time dependence on multiple quantum well structure in InGaAs/In(Ga)AlAs systems
Uenohara, H. ; Takahashi, R. ; Kawamura, Y. ; Iwamura, H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1994
Woodbury, NY : American Institute of Physics (AIP)
Published 1994
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
The dependence of carrier escape time from InGaAs/In(Ga)AlAs multiple quantum wells (MQW) on barrier width and barrier height is studied by using pump-probe measurement. Absorption saturation due to phase space filling caused by photogenerated carriers, and following electric-field screening dominates the transient electroabsorption signals. The barrier thickness strongly affects the carrier escape time. Escape time from MQW of less than 5 ps occurs under high electric field, and the escape time from the optical confinement layer is about one order of magnitude larger.
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| Type of Medium: |
Electronic Resource
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| URL: |