N-channel metal-oxide-semiconductor transistors fabricated in a silicon film bonded onto sapphire
Wang, J. H. ; Jin, M. S. ; Ozguz, V. H. ; Lee, S. H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1994
Woodbury, NY : American Institute of Physics (AIP)
Published 1994
| ISSN: |
1077-3118
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|---|---|
| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
N-channel metal-oxide-semiconductor transistors were fabricated in silicon films that were bonded onto sapphire substrates. The bonded silicon films can withstand high processing temperatures (850 °C). The electrical performance of the resulting devices is comparable to that of devices fabricated in bulk silicon wafers. This technology can be applied to silicon-on-insulator device development and for integrated optoelectronic device research.
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| Type of Medium: |
Electronic Resource
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| URL: |