Resonant Raman scattering and spectral ellipsometry on InAs/GaSb superlattices with different interfaces
Behr, D. ; Wagner, J. ; Schmitz, J. ; Herres, N. ; Ralston, J. D. ; Koidl, P. ; Ramsteiner, M. ; Schrottke, L. ; Jungk, G.
Woodbury, NY : American Institute of Physics (AIP)
Published 1994
Woodbury, NY : American Institute of Physics (AIP)
Published 1994
| ISSN: |
1077-3118
|
|---|---|
| Source: |
AIP Digital Archive
|
| Topics: |
Physics
|
| Notes: |
We have used Raman spectroscopy and spectral ellipsometry to investigate InAs/GaSb short-period superlattices (SLs), grown by molecular-beam epitaxy, with either InSb- or GaAs-like interfaces. Room-temperature ellipsometric measurements show spectral features in the dielectric function due to the E1 and E1+Δ1 interband transitions of GaSb and InAs. For SLs with small InAs layer thicknesses (4 ML InAs/10 ML GaSb) the critical point energies are found to depend on the type of interfacial bonding, with an energy shift of up to 50 meV observed between SLs with GaAs- and InSb-like interfaces. Resonant Raman measurements show a pronounced enhancement in scattering efficiency for the superlattice phonons and, in particular, for the interface modes for incident photon energies matching the critical point energies of the SL. © 1994 American Institute of Physics.
|
| Type of Medium: |
Electronic Resource
|
| URL: |