Photopumped room-temperature edge- and vertical-cavity operation of AlGaAs-GaAs-InGaAs quantum-well heterostructure lasers utilizing native oxide mirrors
Ries, M. J. ; Richard, T. A. ; Maranowski, S. A. ; Holonyak, N. ; Chen, E. I.
Woodbury, NY : American Institute of Physics (AIP)
Published 1994
Woodbury, NY : American Institute of Physics (AIP)
Published 1994
| ISSN: |
1077-3118
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| Source: |
AIP Digital Archive
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| Topics: |
Physics
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| Notes: |
Data are presented on the 300-K continuous and pulsed photopumped laser operation of AlyGa1−yAs-GaAs-InxGa1−xAs quantum-well heterostructure (QWH) crystals that utilize large-index-step high-contrast distributed Bragg reflector mirrors. The mirrors are formed by selective lateral oxidation (H2O+N2, 425 °C) of three lower and three upper AlAs layers in the structure, resulting in enhanced cavity Q in the vertical direction. The laterally oxidized mirrors, a small lower and an upper "stack'' that sandwich a lateral waveguide and double QW active region, are of sufficient quality to permit vertical-cavity laser operation of the QWH crystals.
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| Type of Medium: |
Electronic Resource
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| URL: |