Atomic ordering of GaInP studied by Kelvin probe force microscopy

Leng, Y. ; Williams, C. C. ; Su, L. C. ; Stringfellow, G. B.

Woodbury, NY : American Institute of Physics (AIP)
Published 1995
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The atomic ordering of GaInP has been established and studied by a variety of methods, including transmission electron microscopy, cathodoluminescence, and photoluminescence. In this work, a Kelvin probe force microscope (KPFM) has been employed to image several GaInP samples previously characterized by these established techniques. The results of our study clearly show that the KPFM is capable of distinguishing between ordered and disordered regions in GaInP, and that the KPFM contrast strongly depends on the amplitude of the applied ac bias voltage of the KPFM. The measurements indicate that ordering in GaInP modifies the density and/or lifetime of the surface states. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
_version_ 1798289619940278272
autor Leng, Y.
Williams, C. C.
Su, L. C.
Stringfellow, G. B.
autorsonst Leng, Y.
Williams, C. C.
Su, L. C.
Stringfellow, G. B.
book_url http://dx.doi.org/10.1063/1.113257
datenlieferant nat_lic_papers
hauptsatz hsatz_simple
identnr NLZ218189168
issn 1077-3118
journal_name Applied Physics Letters
materialart 1
notes The atomic ordering of GaInP has been established and studied by a variety of methods, including transmission electron microscopy, cathodoluminescence, and photoluminescence. In this work, a Kelvin probe force microscope (KPFM) has been employed to image several GaInP samples previously characterized by these established techniques. The results of our study clearly show that the KPFM is capable of distinguishing between ordered and disordered regions in GaInP, and that the KPFM contrast strongly depends on the amplitude of the applied ac bias voltage of the KPFM. The measurements indicate that ordering in GaInP modifies the density and/or lifetime of the surface states. © 1995 American Institute of Physics.
package_name American Institute of Physics (AIP)
publikationsjahr_anzeige 1995
publikationsjahr_facette 1995
publikationsjahr_intervall 8004:1995-1999
publikationsjahr_sort 1995
publikationsort Woodbury, NY
publisher American Institute of Physics (AIP)
reference 66 (1995), S. 1264-1266
search_space articles
shingle_author_1 Leng, Y.
Williams, C. C.
Su, L. C.
Stringfellow, G. B.
shingle_author_2 Leng, Y.
Williams, C. C.
Su, L. C.
Stringfellow, G. B.
shingle_author_3 Leng, Y.
Williams, C. C.
Su, L. C.
Stringfellow, G. B.
shingle_author_4 Leng, Y.
Williams, C. C.
Su, L. C.
Stringfellow, G. B.
shingle_catch_all_1 Leng, Y.
Williams, C. C.
Su, L. C.
Stringfellow, G. B.
Atomic ordering of GaInP studied by Kelvin probe force microscopy
The atomic ordering of GaInP has been established and studied by a variety of methods, including transmission electron microscopy, cathodoluminescence, and photoluminescence. In this work, a Kelvin probe force microscope (KPFM) has been employed to image several GaInP samples previously characterized by these established techniques. The results of our study clearly show that the KPFM is capable of distinguishing between ordered and disordered regions in GaInP, and that the KPFM contrast strongly depends on the amplitude of the applied ac bias voltage of the KPFM. The measurements indicate that ordering in GaInP modifies the density and/or lifetime of the surface states. © 1995 American Institute of Physics.
1077-3118
10773118
American Institute of Physics (AIP)
shingle_catch_all_2 Leng, Y.
Williams, C. C.
Su, L. C.
Stringfellow, G. B.
Atomic ordering of GaInP studied by Kelvin probe force microscopy
The atomic ordering of GaInP has been established and studied by a variety of methods, including transmission electron microscopy, cathodoluminescence, and photoluminescence. In this work, a Kelvin probe force microscope (KPFM) has been employed to image several GaInP samples previously characterized by these established techniques. The results of our study clearly show that the KPFM is capable of distinguishing between ordered and disordered regions in GaInP, and that the KPFM contrast strongly depends on the amplitude of the applied ac bias voltage of the KPFM. The measurements indicate that ordering in GaInP modifies the density and/or lifetime of the surface states. © 1995 American Institute of Physics.
1077-3118
10773118
American Institute of Physics (AIP)
shingle_catch_all_3 Leng, Y.
Williams, C. C.
Su, L. C.
Stringfellow, G. B.
Atomic ordering of GaInP studied by Kelvin probe force microscopy
The atomic ordering of GaInP has been established and studied by a variety of methods, including transmission electron microscopy, cathodoluminescence, and photoluminescence. In this work, a Kelvin probe force microscope (KPFM) has been employed to image several GaInP samples previously characterized by these established techniques. The results of our study clearly show that the KPFM is capable of distinguishing between ordered and disordered regions in GaInP, and that the KPFM contrast strongly depends on the amplitude of the applied ac bias voltage of the KPFM. The measurements indicate that ordering in GaInP modifies the density and/or lifetime of the surface states. © 1995 American Institute of Physics.
1077-3118
10773118
American Institute of Physics (AIP)
shingle_catch_all_4 Leng, Y.
Williams, C. C.
Su, L. C.
Stringfellow, G. B.
Atomic ordering of GaInP studied by Kelvin probe force microscopy
The atomic ordering of GaInP has been established and studied by a variety of methods, including transmission electron microscopy, cathodoluminescence, and photoluminescence. In this work, a Kelvin probe force microscope (KPFM) has been employed to image several GaInP samples previously characterized by these established techniques. The results of our study clearly show that the KPFM is capable of distinguishing between ordered and disordered regions in GaInP, and that the KPFM contrast strongly depends on the amplitude of the applied ac bias voltage of the KPFM. The measurements indicate that ordering in GaInP modifies the density and/or lifetime of the surface states. © 1995 American Institute of Physics.
1077-3118
10773118
American Institute of Physics (AIP)
shingle_title_1 Atomic ordering of GaInP studied by Kelvin probe force microscopy
shingle_title_2 Atomic ordering of GaInP studied by Kelvin probe force microscopy
shingle_title_3 Atomic ordering of GaInP studied by Kelvin probe force microscopy
shingle_title_4 Atomic ordering of GaInP studied by Kelvin probe force microscopy
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wilbert
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source_archive AIP Digital Archive
timestamp 2024-05-06T08:03:41.406Z
titel Atomic ordering of GaInP studied by Kelvin probe force microscopy
titel_suche Atomic ordering of GaInP studied by Kelvin probe force microscopy
topic U
uid nat_lic_papers_NLZ218189168